triquint semiconductor texas : phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information november 5, 2001 1 ka band low noise amplifier TGA1319A-EPU key features and performance ? 0.15um phemt technology ? 21-27 ghz frequency range ? 2 db nominal noise figure ? 19 db nominal gain ? 12 dbm pout ? 3v, 45 ma with -0.5v < vg < +0.5v note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications subject to change without notice primary applications ? point-to-point radio ? point-to-multipoint communications typical nf @ 25c typical gain @ 25c chip dimensions 1.984 mm x .923 mm 10 12 14 16 18 20 22 24 26 28 30 15 16 17 18 19 20 21 22 23 24 25 26 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 15 16 17 18 19 20 21 22 23 24 25 26 27 -20 -15 -10 -5 0 15 16 17 18 19 20 21 22 23 24 25 26 -20 -16 -12 -8 -4 0 15 16 17 18 19 20 21 22 23 24 25 26 typical s22 @ 25c typical s11 @ 25c preliminary data, 2 fixtured samples @ 25c
triquint semiconductor texas : phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information november 5, 2001 dc probe tests (t a = 25 c 5 c) symbol parameter minimum maximum value idss saturated drain current --- --- ma v p pinch-off voltage -1.5 -0.5 v bvgs breakdown voltage gate-source --- --- v bvgd breakdown voltage gate-drain --- --- v on-wafer rf probe characteristics (t a = 25 c 5 c) v d = 3 v, i d1 = 15 ma, i d2 = 30 ma limit symbol parameter test condition min typ max units gain small signal gain f = 21 C 27 ghz 18 --- db nf noise figure f = 21 C 26.5 ghz --- 2 db pwr output power @ p1db f = 21 C 27 ghz 10 --- dbm maximum ratings symbol parameter 4/ value notes v + positive supply voltage 5 v i + positive supply current 60 ma 1/ i - negative gate current 5.28 ma p in input continuous wave power 15 dbm p d power dissipation .3 w t ch operating channel temperature 150 0 c2/ 3 / t m mounting temperature (30 seconds) 320 0 c t stg storage temperature -65 to 150 0 c 1/ total current for all stages. 2/ these ratings apply to each individual fet. 3/ junction operating temperature will directly affect the device median time to failure (t m ). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 4/ these ratings represent the maximum operable values for the device. note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications subject to change without notice 2 TGA1319A-EPU
triquint semiconductor texas : phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information november 5, 2001 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications subject to change without notice tga1319a - recommended assembly drawing TGA1319A-EPU 100 pf 100 pf 100 pf 100 pf vd=3v vg1 vg2 rfin rfout 3 notes: 1. vg1 and vg2 may be sourced from the same supply. 2. positive or negative gate bias may be required to achieve recommended operating point.
triquint semiconductor texas : phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information november 5, 2001 mechanical drawing p note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications subject to change without notice 4 TGA1319A-EPU
triquint semiconductor texas : phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information november 5, 2001 assembly process notes gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. reflow process assembly notes: use ausn (80/20) solder with limited exposure to temperatures at or above 300 ? c. an alloy station or conveyor furnace with reducing atmosphere should be used. no fluxes should be utilized. coefficient of thermal expansion matching is critical for long-term reliability. devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: vacuum pencils and/or vacuum collets are the preferred method of pick up. air bridges must be avoided during placement. the force impact is critical during auto placement. organic attachment can be used in low-power applications. curing should be done in a convection oven; proper exhaust is a safety concern. microwave or radiant curing should not be used because of differential heating. coefficient of thermal expansion matching is critical. interconnect process assembly notes: thermosonic ball bonding is the preferred interconnect technique. force, time, and ultrasonics are critical parameters. aluminum wire should not be used. discrete fet devices with small pad sizes should be bonded with 0.0007-inch wire. maximum stage temperature is 200 ? c. 5 TGA1319A-EPU
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